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Ordering number : ENA1086
2SC4919-S
SANYO Semiconductors
DATA SHEET
2SC4919-S
Features
* * * *
NPN Epitaxial Planar Silicon Transistor
Muting Circuit Applications
Ultrasmall-sized package permitting applied sets to be made small and slim. Small output capacitance. Low collector-to-emitter saturation voltage. Low ON resistance.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings 25 15 15 100 200 20 150 150 --55 to +150 Unit V V V mA mA mA mW C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=15V, IE=0A VEB=4V, IC=0A VCE=2V, IC=5mA VCE=5V, IC=10mA VCB=10V, f=1MHz 800 240 1.4 Conditions Ratings min typ max 0.1 0.1 3200 MHz pF Unit A A
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70208LA TI IM TC-00001496 No. A1086-1/4
2SC4919-S
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage On Resistance Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Ron Conditions IC=10mA, IB=1mA IC=10mA, IB=1mA IC=10A, IE=0A IC=1mA, RBE= IE=10A, IC=0A IB=3mA, f=1MHz 25 15 15 0.9 Ratings min typ 14 0.74 max 30 1.1 Unit mV V V V V
Package Dimensions
unit : mm (typ) 7029-002
Top View 1.4
0.3
0.25
3
1.4 0.8
1
0.3
2
0.2 0.45 0.1
1
2
0.07
0.6
3
Bottom View
0.07
1 : Base 2 : Emitter 3 : Collector SANYO : SSFP
100
IC -- VCE
A 0A 160 14 A 0 18
200A
10
IC -- VCE
5.0A 4.5A
4.0A 3.5A 3.0A 2.5A 2.0A 1.5A
1.0A 0.5A
Collector Current, IC -- mA
60A
60
Collector Current, IC -- mA
80
A 120 A 100 80A
8
6
40A
40
4
20A
20
2
0
IB=0A
0 0.4 0.8 1.2 1.6 2.0
0
IB=0A
0 1 2 3 4 5
Collector-to-Emitter Voltage, VCE -- V ITR07753
Collector-to-Emitter Voltage, VCE -- V ITR07754
No. A1086-2/4
2SC4919-S
120
IC -- VBE
VCE=2V
5
hFE -- IC
VCE=2V
Ta=75C
100
3 2
Collector Current, IC -- mA
80
DC Current Gain, hFE
1000 7 5 3 2
25C --25C
60
Ta=75 C
40
20
25C --25C
0
0
0.2
0.4
0.6
0.8
1.0
1.2 ITR07755
100
7
1.0
2
3
5
7
10
2
3
5
7
Base-to-Emitter Voltage, VBE -- V
1000
f T -- IC
Collector Current, IC -- mA
10 7
2 100 ITR07756
Cob -- VCB
VCE=5V
f=1MHz
Gain-Brandwidth Product, f T -- MHz
7 5
Output Capacitance, Cob -- pF
5
3 2
3 2
100 7 5
1.0 7 5
3
7 1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
2
7 100 2 ITR07757
3
7
1.0
2
3
5
7
10
2
3
5
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
3
ITR07758
VBE(sat) -- IC
IC / IB=10
IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
2 100 7 5 3 2
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
1.0 7 5 3 2
25C
Ta= --25C
75C
C 25
75
= Ta
10 7 5 3
C
--2
C 5
0.1 7
7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC -- mA
2
5 7 100 2 ITR07759
5
7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Ron -- IB
IN
Collector Current, IC -- mA
160
5 7 100 2 ITR07760
PC -- Ta
f=1MHz
10
1k 10k IB OUT
150 140
Collector Dissipation, PC -- mW
3 5 7
ON Resisitance, Ron --
7 5 3 2
120 100 80 60 40 20 0 0
1.0 7 5 3
7
0.1
2
3
5
7
1.0
2
20
40
60
80
100
120
140
160
Base Current, IB -- mA
ITR07761
Ambient Temperature, Ta -- C
ITR07762
No. A1086-3/4
2SC4919-S
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice.
PS No. A1086-4/4

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